2025 International Conference on Frontiers Technology in Circuits and Systems 

(FTCS 2025)

November 21-23, 2025 |  Chongqing, China

Prof. Franco Maloberti

IEEE Life Fellow

Pavia University, Italy

Speech title: Very-high Resolution data converters: sigma delta or incremental?

Speech abstract: The bandwidth of many signals can be relatively low, but their conversion often requires high resolution. The types of converters that moderate kT/C noise limit utilize oversampling, spreading the kT/C power over a wide range, and enabling the use of affordable sampling capacitors. Two categories utilize the technique: the sigma-delta, which shapes the noise at the signal frequency to achieve good SNRs, and the incremental. The implementation of the two methods is very similar; however, the incremental method is a Nyquist-rate type. 
The sigma-delta relies on shaping the quantization noise. However, the nose approximation can fail for very slow signals, even for high-order schemes.  The incremental is less effective than the sigma-delta counterpart, but doesn't pose conditions on the time evolution of the input signal. The presentation describes the two methods and considers their practical limits. Knowing the advantages and disadvantages of the two techniques helps the researcher make the proper choice of high-resolution data converter architectures.

Bio: Franco Maloberti is an IEEE Life Fellow. He earned his Laurea Degree in Physics (Summa cum Laude) from the University of Parma, Italy, in 1968, and the Doctor Honoris Causa degree in Electronics from INAOE, Mexico (1996). In 2024, he received a Doctor Honoris Causa from the University of Macau, China SAR. He held the TI/J. Kilby Analog Engineering Chair Professorship at Texas A&M University, and was a Chair Professor of Microelectronics at the University of Texas at Dallas. Currently, he is an Emeritus Professor at the University of Pavia, Italy. Franco Maloberti specializes in integrated circuits and analog-digital applications, particularly in switched-capacitor circuits, data converters, telecommunications interfaces, and sensor systems. He has authored over 600 scientific papers and 10 books and holds 41 U.S. patents. He has held various IEEE roles, including Division I Director, President of the IEEE CAS, and President of the IEEE Sensor Council. He has received numerous IEEE awards: the CAS Society Meritorious Service Award, the CAS Golden Jubilee Medal, the Millennium Medal, and the CAS Mac Van Valkenburg Award.

Prof. Guoyu Wang

Rank Prize recipient
Chongqing University of Posts and Telecommunications, China

Speech title: Chip Design and Innovation

Speech abstract: As principal designer he will review how the first single CIS chip developed and how it overtook CCD. As originator of DMB+ he will introduce what DMB+ means and its complementary role to communications. Innovative thoughts will be highlighted for above introductions. Progresses on IC design methodology, such as Soc without Arm core, will be reported.

Bio: Prof. Wang has been working on IC design more than 40 years with plenty of experiences and stories. He was a professor in Xian Jiaotong University since 1996 and a professor in Sichuan University since 2000, and he is now a professor of Chongqing University of Posts and Telecommunications.

He was the principal designer of CIS invention team in Edinburgh University and VLSI Vision Ltd in 1987 - 1994 and recipient of rank prize, 2008 London. He is also the originator of DMB+.

Prof. Sai Weng Sin (冼世荣)

IEEE Solid-State Circuit Society (SSCS) Macau Chapter

University of Macau, Macao, China

Speech title: The Historical Development of Data Converters - ADCs that 
last from 1954 to 2025

Speech abstract: Data Converters are one of the key building blocks and the performance bottleneck in the various applications of integrated circuits in our daily lives. The development of data converters is the fundamental driving force behind the modern technology of smart mobile devices based on sensors, communication, and artificial intelligence. However, Data Converters, e.g. SAR ADCs, already have a long history; they served as the key to improving human electronics technology even in the long past, modern, and the foreseeable future. This talk will present the historical development of data converters and review the key data converter development trends in the current era and what we can do.

Bio: Sai-Weng Sin (Terry) (Senior Member, IEEE) received the B.S., M.S., and Ph.D. degrees in electrical and electronics engineering from the University of Macau, Macao, China, in 2001, 2003, and 2008, respectively. He is currently a Professor in the Faculty of Science and Technology, University of Macau, and is the Deputy Director of State-Key Laboratory of Analog and Mixed-Signal VLSI, University of Macau, Macao, China. He has published 1 book entitled “Generalized Low-Voltage Circuit Techniques for Very High-Speed Time-Interleaved Analog-to-Digital Converters” in Springer, holds 12 patents and over 170 technical journals and conference papers in the field of high-performance data converters and analog mixed-signal integrated circuits.
Dr. Sin currently serves as the Chair of the Data Converter TPC subcommittee in IEEE Custom Integrated Circuits Conference, Student Demonstration Program Co-Chair in TPC of the IEEE Asian Solid-State Circuits Conference (A-SSCC), TPC member of IEEE Symposium of VLSI Circuits, subcommittee Co-chair of the International Conference on Integrated Circuits, Technologies, and Applications (ICTA). He is currently an Associate Editor-in-Chief (Digital Communications) of the IEEE Transaction on Circuits and Systems II – Express Briefs and also the Associate Editor of the Journal of Semiconductors. He is an IEEE SSCS Distinguished Lecturer for 2024 and 2025. He was the co-recipient of 2011 State Science and Technology Progress Award (second-class), China.

Prof. Wenzhong Bao

Fudan University, China

Speech title: The Future of 2D Semiconductors—The Path to Integration with Silicon-Based Chips

Speech abstract: With the rapid advancement of semiconductor technology, silicon-based chips are gradually approaching their physical limits in terms of performance enhancement and power consumption control. Two-dimensional (2D) semiconductor materials, such as transition metal dichalcogenides (TMDs), have emerged as promising candidates for next-generation semiconductor technologies due to their atomic-scale thickness, excellent electrical properties, and tunable bandgaps. However, the industrial application of 2D semiconductors still faces challenges in material fabrication, interface engineering, and integration technologies.This presentation will explore the pathways for integrating 2D semiconductors with silicon-based chips, focusing on their synergies in heterogeneous integration, three-dimensional stacking, and novel device architectures. Building on this, we will conceptualize and investigate the establishment of an industrialization-oriented "non-silicon" semiconductor process platform, which serves as a bridge connecting the mature silicon-based industry with emerging non-silicon industries. This platform aims to provide prototyping services for academia, small and medium-sized enterprises, and companies that stand to benefit from the trend of "heterogeneous integration" of silicon and non-silicon materials in the post-Moore era, ultimately realizing a complete ecosystem of silicon/non-silicon integration.Looking ahead, we will highlight key challenges in material growth, interface optimization, and system integration, as well as the potential applications of 2D semiconductor-silicon chip fusion technologies in low-power circuits, artificial intelligence, the Internet of Things, and quantum computing. We believe that this integration path will not only provide new momentum for the continuous development of semiconductor technology but also open up vast possibilities for innovation in future electronic devices. Breakthroughs in this field are expected to be widely applied in industry, defense, and civilian infrastructure, forming an independent intellectual property system and developing advanced process routes with Chinese characteristics. These efforts will position China at the forefront of competition in new materials and devices in the post-Moore era.

Bio: Prof. Bao is currently a Full Professor with the School of Microelectronics, Fudan University. His current research interest includes emerging advanced materials and their applications in next generation electrical, optoelectrical, and energy applications. He received the 2016 International Union of Pure and Applied Physics (IUPAP) Young Scientist Prize (C10) and the 2017 Qiushi Outstanding Young Scientist Prize. He is also the Clarivate Analytics Highly Cited Researcher, in 2018.